Double Gate 6H-Silicon Carbide Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor
نویسندگان
چکیده
This article presents a novel structure for efficient label free biosensing applications. The proposed device comprises of 6H-Silicon Carbide based double gate Schottky Barrier FET with two cavities to detect the biomolecules. Using Atlas TCAD simulations, it has been verified that maximum ON current sensitivity 1.02 × 105, transconductance 7.741 104, ION/IOFF 31.4, sub-threshold swing 77.19 mV/decade and threshold voltage 34.54 mV neutral biomolecule K = 12. Similar simulations have also performed different charged biomolecules, varying from ± 5 1010 C/cm2 1 1012 C/cm2. Besides, biosensor shows exceptional performance in terms ON-current selectivity selectivity. Finally, check response changing input parameters, linearity analyzed. achieved near-unity value Pearson’s fitness coefficient signifies strong positive correlation between dielectric property
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ژورنال
عنوان ژورنال: Silicon
سال: 2022
ISSN: ['1876-9918', '1876-990X']
DOI: https://doi.org/10.1007/s12633-022-02273-7